Half-sliced silicon wafers
Leading technology, more reliable and efficient
Advanced equipment, boosting cost reduction and efficiency improvement
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Minority carrier lifetime：≥800us
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Resistivity：0.3-2.1Ω.cm
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Carbon content：≤1ppma
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Oxygen content：≤14ppma
Dimension
Material Properties
| Item | Specification |
|---|---|
| Growth mode | CZ |
| Crystal orientation | ＜100＞±3° |
| Conductivity type | N type |
| Dislocation density | ≤500 |
| Item | Growth mode | |
| Specification | CZ | |
| Item | Crystal orientation | |
| Specification | ＜100＞±3° | |
| Item | Conductivity type | |
| Specification | N type | |
| Item | Dislocation density | |
| Specification | ≤500 | |
Electrical Properties
| Item | Specification |
|---|---|
| Oxygen content | ≤14ppma |
| Carbon content | ≤1ppma |
| Resistivity | 0.3-2.1Ω.cm |
| Minority carrier lifetime | ≥800us |
| Item | Oxygen content | |
| Specification | ≤14ppma | |
| Item | Carbon content | |
| Specification | ≤1ppma | |
| Item | Resistivity | |
| Specification | 0.3-2.1Ω.cm | |
| Item | Minority carrier lifetime | |
| Specification | ≥800us | |
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